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愛普生有源晶振X1G005591030700和無源晶振振動(dòng)頻率區(qū)別

2022-09-07 15:47:29 康華爾電子

愛普生有源晶振X1G005591030700和無源晶振振動(dòng)頻率區(qū)別

當(dāng)外加交變電壓的頻率與晶片的固有頻率由晶片的尺寸和形狀決定相等時(shí),機(jī)械振動(dòng)的幅度將急劇增加,這種現(xiàn)象稱為壓電諧振.壓電諧振狀態(tài)的建立和維持都必須借助于振蕩器電路才能實(shí)現(xiàn).愛普生貼片晶振是一個(gè)串聯(lián)型振蕩器,晶體管T1和T2構(gòu)成的兩級放大器,石英晶體XT與電容C2構(gòu)成LC電路.在這個(gè)電路中石英晶體相當(dāng)于一個(gè)電感,C2為可變電容器,調(diào)節(jié)其容量即可使電路進(jìn)入諧振狀態(tài).

愛普生OSC晶振,X1G005591030700有源XO晶振

愛普生有源晶振編碼 型號 頻率 長X寬X高 輸出波 電源電壓 工作溫度 頻差 最大值
X1G005591029100 SG-8018CE 20.160000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591029200 SG-8018CE 47.500000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591029300 SG-8018CE 11.400000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591029400 SG-8018CE 52.500000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤5.2mA
X1G005591029500 SG-8018CE 12.600000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591029600 SG-8018CE 66.666600MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤5.2mA
X1G005591029700 SG-8018CE 25.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591029800 SG-8018CE 10.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591029900 SG-8018CE 50.193300MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤5.2mA
X1G005591030000 SG-8018CE 13.330000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591030100 SG-8018CE 27.600000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591030200 SG-8018CE 68.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤5.2mA
X1G005591030300 SG-8018CE 63.200000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤5.2mA
X1G005591030400 SG-8018CE 3.840000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591030500 SG-8018CE 20.971520MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591030600 SG-8018CE 4.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591030700 SG-8018CE 8.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591030800 SG-8018CE 7.159090MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591030900 SG-8018CE 2.048000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591031000 SG-8018CE 25.600000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591031100 SG-8018CE 30.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591031200 SG-8018CE 32.500000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591031300 SG-8018CE 22.000000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591031400 SG-8018CE 4.915200MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591031500 SG-8018CE 3.579546MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA
X1G005591031600 SG-8018CE 21.250000MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤4.4mA
X1G005591031700 SG-8018CE 3.612700MHz 3.20x2.50x1.20mm CMOS 1.620to3.630V -40to105°C +/-50ppm ≤3.5mA

有源晶振電路原理及與無源晶振的聯(lián)系與區(qū)別有源晶振電路及工作原理簡述有源晶振是由石英晶體組成的,石英晶片之所以能當(dāng)為振蕩器使用,是基于它的壓電效應(yīng)：日產(chǎn)晶振在晶片的兩個(gè)極上加一電場,會(huì)使晶體產(chǎn)生機(jī)械變形;在石英晶片上加上交變電壓,晶體就會(huì)產(chǎn)生機(jī)械振動(dòng),同時(shí)機(jī)械變形振動(dòng)又會(huì)產(chǎn)生交變電場,雖然這種交變電場的電壓極其微弱,但其振動(dòng)頻率是十分穩(wěn)定的.

愛普生OSC晶振,X1G005591030700有源XO晶振

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