535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振，美國進口晶振，Silicon品牌晶振，型號：Si535，編碼為：535BB156M250DG，頻率為：156.250MHz，電壓：3.3V，LVDS輸出差分晶振，溫度穩(wěn)定性：±20ppm，工作溫度范圍：-40℃至+85℃，小體積晶振尺寸：7.0x5.0mm封裝，六腳貼片晶振，有源晶振，石英晶振，差分晶體振蕩器。應用程序：10/40/100G數據中心，10G以太網，交換機/路由器，光纖通道/SAS/存儲，企業(yè)服務器，網絡，電信，光模塊，無線網絡等應用。
Si535 XO利用天空解決方案的先進DSPLL®電路提供一個高速差分頻率的超低抖動時鐘。與傳統(tǒng)的XO不同，每個輸出頻率都需要一個不同的晶體，而Si535石英晶振使用一個固定的晶體來提供一個大范圍的輸出頻率。這種基于集成電路的方法允許晶體諧振器提供特殊的頻率穩(wěn)定性和可靠性。此外，DSPLL時鐘合成提供了優(yōu)越的電源噪聲抑制，簡化了在通信系統(tǒng)中通常發(fā)現的噪聲環(huán)境中產生低抖動時鐘的任務。基于Si535 IC的XO在裝運時被工廠編程，從而消除了與自定義振蕩器相關的長時間的前置時間。

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振,產品特點：

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振,參數表

Parameter

Symbol

Test Condition

Min

Typ

Max

Unit

Nominal Frequency1

fO

LVPECL/LVDS

156.250

MHz

Initial Accuracy

fi

Measured at +25 °C at time of shipping

—

±1.5

—

ppm

Temperature Stability1,2

–7 –20

— —

+7 +20

ppm

Aging

fa

Frequency drift over first year

±3

ppm

Frequency drift over 20 year life

—

—

±10

ppm

Total Stability2

Temp stability = ±20 ppm

—

—

±31.5

ppm

Temp stability = ±7 ppm

—

—

20

Powerup Time3

tOSC

TA= –40°C — +85°C

10

ms

535BB156M250DG,Si535,7050mm,156.25MHz,Silicon差分晶振,尺寸圖

石英晶體振蕩器	品牌	型號	頻率	電壓	頻率穩(wěn)定度	包裝/封裝
535FB125M000DG	Silicon晶振	Si535	125MHz	2.5V	±20ppm	6-SMD, No Lead
SI50122-A4-GM	Silicon晶振	SI50122-A4	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
536BB156M250DG	Silicon晶振	Si536	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536FB156M250DG	Silicon晶振	Si536	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
536AB156M250DG	Silicon晶振	Si536	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536EB156M250DG	Silicon晶振	Si536	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
536BB125M000DG	Silicon晶振	Si536	125MHz	3.3V	±20ppm	6-SMD, No Lead
536AB125M000DG	Silicon晶振	Si536	125MHz	3.3V	±20ppm	6-SMD, No Lead
535EB125M000DG	Silicon晶振	Si535	125MHz	2.5V	±20ppm	6-SMD, No Lead
536EB125M000DG	Silicon晶振	Si536	125MHz	2.5V	±20ppm	6-SMD, No Lead
535BB125M000DG	Silicon晶振	Si535	125MHz	3.3V	±20ppm	6-SMD, No Lead
535BB156M250DG	Silicon晶振	Si535	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
535FB156M250DG	Silicon晶振	Si535	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
535AB125M000DG	Silicon晶振	Si535	125MHz	3.3V	±20ppm	6-SMD, No Lead
SI50122-A1-GM	Silicon晶振	SI50122-A1	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A2-GM	Silicon晶振	SI50122-A2	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
535AB156M250DG	Silicon晶振	Si535	156.25MHz	3.3V	±20ppm	6-SMD, No Lead
536FB125M000DG	貼片晶振	Si536	125MHz	2.5V	±20ppm	6-SMD, No Lead
535EB156M250DG	Silicon晶振	Si535	156.25MHz	2.5V	±20ppm	6-SMD, No Lead
500DLAA125M000ACF	Silicon晶振	Si500D	125MHz	2.5V	±150ppm	6-SMD, No Lead
500DLAA200M000ACF	Silicon晶振	Si500D	200MHz	2.5V	±150ppm	6-SMD, No Lead
590AB70M6560DG	Silicon晶振	Si590	70.656MHz	3.3V	±25ppm	6-SMD, No Lead
590FA200M000DG	Silicon晶振	Si590	200MHz	2.5V	±50ppm	6-SMD, No Lead
590DA156M250DG	Silicon晶振	Si590	156.25MHz	3.3V	±50ppm	6-SMD, No Lead
591BB300M000DG	Silicon晶振	Si591	300MHz	3.3V	±25ppm	6-SMD, No Lead
550CD74M2500DGR	Silicon晶振	Si550	74.25MHz	3.3V	±50ppm	6-SMD, No Lead
514GBB000118AAG	Silicon晶振	Si514	156.25MHz	2.5V	±25ppm	6-SMD, No Lead
550AE100M000DGR	Silicon晶振	Si550	100MHz	3.3V	±20ppm	6-SMD, No Lead
550AE100M000DG	Silicon晶振	Si550	100MHz	3.3V	±20ppm	6-SMD, No Lead
SI50122-A3-GM	Silicon晶振	SI50122-A3	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A5-GM	Silicon晶振	SI50122-A5	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A6-GM	Silicon晶振	SI50122-A6	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A1-GMR	Silicon晶振	SI50122-A1	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A2-GMR	Silicon晶振	SI50122-A2	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A3-GMR	Silicon晶振	SI50122-A3	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A4-GMR	Silicon晶振	SI50122-A4	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A5-GMR	Silicon晶振	SI50122-A5	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN
SI50122-A6-GMR	Silicon晶振	SI50122-A6	100MHz	2.25 V ~ 3.63 V	+100ppm	10-VFDFN