日本精工愛普生接受了中國(guó)蘇州政府2007 年的招商引資,命名為【愛普生拓優(yōu)科夢(mèng)水晶元器件（蘇州）有限公司】 愛普生拓優(yōu)科夢(mèng)（Epson Toyocom）是精工愛普生株式會(huì)社與愛普生（中國(guó)）有限公司共同投資成立的有限責(zé)任公司（外商合資）.目前注冊(cè)資本2500萬(wàn)美金.現(xiàn)員工人數(shù):1500人.主要從事2520晶振系列產(chǎn)品的生產(chǎn),投資初期主要生產(chǎn)32.768KHZ系列產(chǎn)品,從2009年起32.768K系列產(chǎn)品轉(zhuǎn)向馬來西亞量產(chǎn).蘇州愛普生工廠就以生產(chǎn)高端的石英晶體振蕩器為主,普通石英晶體諧振器為輔.
愛普生晶振,有源晶振,SG-8101CG晶振,X1G0051810011晶振,2520mm體積的晶振,可以說是目前小型數(shù)碼產(chǎn)品的福音,目前超小型的智能手機(jī)里面所應(yīng)用的就是小型的石英晶振,該產(chǎn)品最適用于無線通訊系統(tǒng),無線局域網(wǎng),已實(shí)現(xiàn)低相位噪聲,低電壓,低消費(fèi)電流和高穩(wěn)定度,超小型,質(zhì)量輕等產(chǎn)品特點(diǎn),產(chǎn)品本身編帶包裝方式,可對(duì)應(yīng)自動(dòng)高速貼片機(jī)應(yīng)用,以及高溫回流焊接（產(chǎn)品無鉛對(duì)應(yīng)）,為無鉛產(chǎn)品.
石英晶振在選用晶片時(shí)應(yīng)注意溫度范圍、貼片晶振溫度范圍內(nèi)的頻差要求，貼片晶振溫度范圍寬時(shí)(-40℃-85℃)晶振切割角度比窄溫(-10℃-70℃)切割角度應(yīng)略高。對(duì)于晶振的條片，長(zhǎng)邊為 X 軸，短邊為 Z 軸，面為 Y 軸。對(duì)于圓片晶振，X、Z 軸較難區(qū)分，所以石英晶振對(duì)精度要求高的產(chǎn)品（如部分定單的 UM-1），會(huì)在 X 軸方向進(jìn)行拉弦（切掉一小部分），以利于晶振的晶片有方向的裝架點(diǎn)膠，點(diǎn)膠點(diǎn)點(diǎn)在 Z 軸上。保證晶振產(chǎn)品的溫度特性。
|
項(xiàng)目 |
符號(hào) |
規(guī)格說明 |
條件 |
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輸出頻率范圍 |
f0 |
0.67~170MHZ |
請(qǐng)聯(lián)系我們以便獲取其它可用頻率的相關(guān)信息 |
|
電源電壓 |
VCC |
1.8~3.3V |
請(qǐng)聯(lián)系我們以了解更多相關(guān)信息 |
|
儲(chǔ)存溫度 |
T_stg |
-55℃to +125℃ |
裸存 |
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工作溫度 |
T_use |
G: -40℃to +85℃ |
請(qǐng)聯(lián)系我們查看更多資料http://m.bainawang.com.cn |
|
H: -40℃to +105℃ |
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J: -40℃to +125℃ |
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頻率穩(wěn)定度 |
f_tol |
J: ±50 × 10-6 |
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L: ±100 × 10-6 |
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T: ±150 × 10-6 |
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功耗 |
ICC |
3.5 mA Max. |
無負(fù)載條件、最大工作頻率 |
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待機(jī)電流 |
I_std |
3.3μA Max. |
ST=GND |
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占空比 |
SYM |
45 % to 55 % |
50 % VCC極, L_CMOS≦15 pF |
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輸出電壓 |
VOH |
VCC-0.4V Min. |
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VOL |
0.4 V Max. |
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輸出負(fù)載條件 |
L_CMOS |
15 pF Max. |
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輸入電壓 |
VIH |
80% VCCMax. |
ST終端 |
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VIL |
20 % VCCMax. |
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上升/下降時(shí)間 |
tr / tf |
4 ns Max. |
20 % VCCto 80 % VCC極, L_CMOS=15 pF |
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振蕩啟動(dòng)時(shí)間 |
t_str |
3 ms Max. |
t=0 at 90 % |
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頻率老化 |
f_aging |
±3 × 10-6/ year Max. |
+25℃,初年度,第一年 |
愛普生有源進(jìn)口日產(chǎn)晶振型號(hào)列表:
愛普生有源進(jìn)口日產(chǎn)晶振編碼列表:
Model
Frequency
LxWxH
Output Wave
Ope Temperature
Freq. Tol.
I [Max]
25°C Aging
Aging2
Symmetry
SG-8101CG
48.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
66.666660 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 5.2 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
24.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
100.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 5.9 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
16.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 3.5 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
25.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
25.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
1.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 3.5 mA
Included in Frequency tolerance First year
45 to 55 %
SG-8101CG
80.000000 MHz
2.50 x 2.00 x 0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 5.9 mA
Included in Frequency tolerance First year
45 to 55 %
X1G0051810011
SG-8101CG
48.000000 MHz
2.50 x 2.00 x
0.80 mm
CMOS
-40 to 105 °C
+/-20 ppm
≤ 4.4 mA
Included in
Frequency tolerance First year
45 to 55 %
X1G0051810013
SG-8101CG
66.666660
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
5.2 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810014
SG-8101CG
24.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810015
SG-8101CG
100.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
5.9 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810016
SG-8101CG
16.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
3.5 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810017
SG-8101CG
25.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810018
SG-8101CG
25.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
4.4 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810019
SG-8101CG
1.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
3.5 mA
Included
in Frequency tolerance First year
45
to 55 %
X1G0051810020
SG-8101CG
80.000000
MHz
2.50
x 2.00 x 0.80 mm
CMOS
-40
to 105 °C
+/-20
ppm
≤
5.9 mA
Included
in Frequency tolerance First year
45
to 55 %
自動(dòng)安裝和真空化引發(fā)的沖擊會(huì)破壞產(chǎn)品特性并影響這些日本2520有源振蕩器產(chǎn)品。請(qǐng)?jiān)O(shè)置安裝條件以盡可能將沖擊降至最低,并確保在安裝前未對(duì)晶振特性產(chǎn)生影響。條件改變時(shí),請(qǐng)重新檢查安裝條件。同時(shí),在安裝前后,請(qǐng)確保產(chǎn)品未撞擊機(jī)器或其他電路板等。愛普生晶振,有源晶振,SG-8101CG晶振,X1G0051810011晶振
存儲(chǔ)事項(xiàng):(1) 在更高或更低溫度或高濕度環(huán)境下長(zhǎng)時(shí)間保存時(shí),會(huì)影響計(jì)算機(jī)晶體振蕩器頻率穩(wěn)定性或焊接性。請(qǐng)?jiān)谡囟群蜐穸拳h(huán)境下保存這些石英晶振產(chǎn)品,并在開封后盡可能進(jìn)行安裝,以免長(zhǎng)期儲(chǔ)藏。 正常溫度和濕度： 溫度：+15°C 至 +35°C,濕度 25 % RH 至 85 % RH。 (2) 請(qǐng)仔細(xì)處理內(nèi)外盒與卷帶。外部壓力會(huì)導(dǎo)致卷帶受到損壞。
耐焊性：將晶振加熱包裝材料至+150°C以上會(huì)破壞產(chǎn)品特性或損害產(chǎn)品。如需在+150°C以上焊接,建議使用SMD晶振產(chǎn)品。在下列回流條件下,對(duì)石英晶振產(chǎn)品甚至2520mm晶體振蕩器使用更高溫度,會(huì)破壞晶振特性。建議使用下列配置情況的回流條件。安裝這些貼片晶振之前,應(yīng)檢查焊接溫度和時(shí)間。同時(shí),在安裝條件更改的情況下,請(qǐng)?jiān)俅芜M(jìn)行檢查。如果需要焊接的晶振產(chǎn)品在下列配置條件下進(jìn)行焊接,請(qǐng)聯(lián)系我們以獲取耐熱的相關(guān)信息。
希華晶振,有源晶振,SHO-2520晶振,貼片有源晶振
愛普生晶振,溫補(bǔ)晶振,TG-5035CG晶振,X1G0038510014晶振
愛普生晶振,有源晶振,SG-9101CG晶振,X1G0052910011晶振
百利通亞陶晶振,有源晶振,FJ晶振,FJ2400011晶振
百利通亞陶晶振,溫補(bǔ)晶振,JT晶振,JT15260001晶振
百利通亞陶晶振,有源晶振,KD晶振,KD3270037晶振
KYOCERA晶振,無源晶振,CX2520DB晶振,CX2520DB16000D0GEJCC晶振
KYOCERA晶振,32.768K有源晶振,KC2520B晶振,KC2520B32K7680CM2E00晶振